smd type 1 features adoption of fbet, mbit processes high breakdown voltage and large current capacity absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -6 v collector current i c -2 a collector current (pulse) i cp -3 a p c 500 mw p c* 1.5 w jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = -100v , i e = 0 -100 na emitter cut-off current i ebo v eb =-4v,i c = 0 -100 na collector-base breakdown voltage v (br)cbo i c = -10ua , i e = 0 -120 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -100 v emitter-base breakdown voltage v (br)ebo i e = -10ua , i c =0 -6 v dc current gain h fe v ce =-5v,i c = -100ma 100 400 collector-emitter saturation voltage v ce(sat) i c =-1a,i b = -100ma -0.22 -0.6 v base-emitter saturation voltage v be(sat) i c =-1a,i b = -100ma -0.85 -1.2 v gain-bandwidth product f t v ce = -10v , i c = -100ma 120 mhz collector output capacitance c ob v cb = -10v , i e = 0 , f = 1mhz 25 pf turn-on time t on 80 storage time t stg 750 fall time t f 40 ns see test circuit. sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SA1417 product specification 4008-318-123
2 smd type electrical characteristics curves test circuit h fe classification marking rank r s t h fe 100 200 140 280 200 400 ac sales@twtysemi.com 2 of 3 http://www.twtysemi.com 2SA1417 product specification 4008-318-123
3 smd type 2SA1417 sales@twtysemi.com 3 of 3 http://www.twtysemi.com smd type product specification 4008-318-123
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